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UPA2735GR-E1-AT Datasheet

UPA2735GR-E1-AT Datasheet
Total Pages: 8
Size: 181.58 KB
Renesas Electronics America
This datasheet covers 1 part numbers: UPA2735GR-E1-AT
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UPA2735GR-E1-AT

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

16A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

195nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6250pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.1W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP

Package / Case

8-PowerSOIC (0.173", 4.40mm Width)