UPA2737GR-E1-AT Datasheet
UPA2737GR-E1-AT Datasheet
Total Pages: 8
Size: 191.85 KB
Renesas Electronics America
This datasheet covers 1 part numbers:
UPA2737GR-E1-AT
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Manufacturer Renesas Electronics America Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 11A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 13mOhm @ 11A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1750pF @ 10V FET Feature - Power Dissipation (Max) 1.1W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Package / Case 8-SOIC (0.173", 4.40mm Width) |
