Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

UPA2822T1L-E1-AT Datasheet

UPA2822T1L-E1-AT Datasheet
Total Pages: 8
Size: 140.24 KB
Renesas Electronics America
This datasheet covers 1 part numbers: UPA2822T1L-E1-AT
UPA2822T1L-E1-AT Datasheet Page 1
UPA2822T1L-E1-AT Datasheet Page 2
UPA2822T1L-E1-AT Datasheet Page 3
UPA2822T1L-E1-AT Datasheet Page 4
UPA2822T1L-E1-AT Datasheet Page 5
UPA2822T1L-E1-AT Datasheet Page 6
UPA2822T1L-E1-AT Datasheet Page 7
UPA2822T1L-E1-AT Datasheet Page 8
UPA2822T1L-E1-AT

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.6mOhm @ 34A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

83nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4660pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-HWSON (3.3x3.3)

Package / Case

8-PowerWDFN