US5U35TR Datasheet
US5U35TR Datasheet
Total Pages: 13
Size: 1,637.01 KB
Rohm Semiconductor
Website: https://www.rohm.com/
This datasheet covers 1 part numbers:
US5U35TR
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Manufacturer Rohm Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 45V Current - Continuous Drain (Id) @ 25°C 700mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 800mOhm @ 700mA, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 120pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 1W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TUMT5 Package / Case 6-SMD (5 Leads), Flat Lead |
