VS-EMG050J60N Datasheet
VS-EMG050J60N Datasheet
Total Pages: 12
Size: 241.87 KB
Vishay Semiconductor Diodes Division
This datasheet covers 1 part numbers:
VS-EMG050J60N
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Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type - Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 88A Power - Max 338W Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A Current - Collector Cutoff (Max) 100µA Input Capacitance (Cies) @ Vce 9.5nF @ 30V Input Standard NTC Thermistor Yes Operating Temperature 150°C (TJ) Mounting Type Chassis Mount Package / Case EMIPAK2 Supplier Device Package EMIPAK2 |
