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VS-EMG050J60N Datasheet

VS-EMG050J60N Datasheet
Total Pages: 12
Size: 241.87 KB
Vishay Semiconductor Diodes Division
This datasheet covers 1 part numbers: VS-EMG050J60N
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VS-EMG050J60N

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

IGBT Type

-

Configuration

Half Bridge

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

88A

Power - Max

338W

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 50A

Current - Collector Cutoff (Max)

100µA

Input Capacitance (Cies) @ Vce

9.5nF @ 30V

Input

Standard

NTC Thermistor

Yes

Operating Temperature

150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

EMIPAK2

Supplier Device Package

EMIPAK2