VS-GB100TS60NPBF Datasheet
VS-GB100TS60NPBF Datasheet
Total Pages: 8
Size: 187.08 KB
Vishay Semiconductor Diodes Division
This datasheet covers 1 part numbers:
VS-GB100TS60NPBF
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Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type NPT Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 108A Power - Max 390W Vce(on) (Max) @ Vge, Ic 2.85V @ 15V, 100A Current - Collector Cutoff (Max) 100µA Input Capacitance (Cies) @ Vce - Input Standard NTC Thermistor No Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case INT-A-Pak Supplier Device Package INT-A-PAK |
