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ZXM66P03N8TA Datasheet

ZXM66P03N8TA Datasheet
Total Pages: 4
Size: 212.56 KB
Diodes Incorporated
This datasheet covers 1 part numbers: ZXM66P03N8TA
ZXM66P03N8TA Datasheet Page 1
ZXM66P03N8TA Datasheet Page 2
ZXM66P03N8TA Datasheet Page 3
ZXM66P03N8TA Datasheet Page 4
ZXM66P03N8TA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

6.25A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

25mOhm @ 5.6A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1979pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.56W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)