Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

ZXMN3A02N8TC Datasheet

ZXMN3A02N8TC Datasheet
Total Pages: 7
Size: 211.74 KB
Diodes Incorporated
This datasheet covers 1 part numbers: ZXMN3A02N8TC
ZXMN3A02N8TC Datasheet Page 1
ZXMN3A02N8TC Datasheet Page 2
ZXMN3A02N8TC Datasheet Page 3
ZXMN3A02N8TC Datasheet Page 4
ZXMN3A02N8TC Datasheet Page 5
ZXMN3A02N8TC Datasheet Page 6
ZXMN3A02N8TC Datasheet Page 7
ZXMN3A02N8TC

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

7.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

25mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26.8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.56W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)