Infineon Technologies Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerInfineon Technologies
Records 720
Page 8/24
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
STD THYR/DIODEN DISC |
4,446 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
SIC CHIP |
4,050 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 200V 650A |
4,086 |
|
- | Standard | 200V | 650A | 950mV @ 450A | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 200V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
SIC CHIP |
7,146 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 650A |
5,562 |
|
- | Standard | 600V | 650A | 950mV @ 450A | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 600V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 970A |
5,040 |
|
- | Standard | 600V | 970A | 970mV @ 750A | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 600V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.6KV 770A |
4,050 |
|
- | Standard | 1600V | 770A | 1.08V @ 400A | Standard Recovery >500ns, > 200mA (Io) | - | 30mA @ 1600V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.8KV 770A |
5,004 |
|
- | Standard | 1800V | 770A | 1.08V @ 400A | Standard Recovery >500ns, > 200mA (Io) | - | 30mA @ 1800V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.8KV 950A |
2,034 |
|
- | Standard | 1800V | 950A | 1.12V @ 650A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 1800V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GP 1.2KV 89A BG-PB20-1 |
4,914 |
|
- | Standard | 1200V | 89A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1200V | - | Chassis Mount | Module | BG-PB20-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 1230A |
5,292 |
|
- | Standard | 1200V | 1230A | 1.063V @ 800A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 1200V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.4KV 1230A |
8,982 |
|
- | Standard | 1400V | 1230A | 1.063V @ 800A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 1400V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
SIC CHIP |
7,110 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE GP 1.6KV 89A BG-PB20-1 |
6,732 |
|
- | Standard | 1600V | 89A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1600V | - | Chassis Mount | Module | BG-PB20-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GP 1.2KV 104A BG-PB20-1 |
6,516 |
|
- | Standard | 1200V | 104A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1200V | - | Chassis Mount | Module | BG-PB20-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 2.2KV 820A |
5,886 |
|
- | Standard | 2200V | 820A | 1.25V @ 750A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 2200V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 2.2KV 950A |
5,688 |
|
- | Standard | 2200V | 950A | 1.12V @ 650A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 2200V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GP 1.6KV 104A BG-PB20-1 |
7,308 |
|
- | Standard | 1600V | 104A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1600V | - | Chassis Mount | Module | BG-PB20-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 2.4KV 820A |
7,794 |
|
- | Standard | 2400V | 820A | 1.25V @ 750A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 2400V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GP 1.8KV 104A BG-PB20-1 |
7,506 |
|
- | Standard | 1800V | 104A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1800V | - | Chassis Mount | Module | BG-PB20-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.6KV 1230A |
5,706 |
|
- | Standard | 1600V | 1230A | 1.063V @ 800A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 1600V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.8KV 1230A |
7,650 |
|
- | Standard | 1800V | 1230A | 1.063V @ 800A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 1800V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GP 1.4KV 104A BG-PB34-1 |
2,070 |
|
- | Standard | 1400V | 104A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1400V | - | Chassis Mount | Module | BG-PB34-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.8KV 1050A |
8,964 |
|
- | Standard | 1800V | 1050A | 1V @ 1000A | Standard Recovery >500ns, > 200mA (Io) | - | 60mA @ 1800V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GP 1.6KV 171A BG-PB34-1 |
5,976 |
|
- | Standard | 1600V | 171A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1600V | - | Chassis Mount | Module | BG-PB34-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GP 1.2KV 171A BG-PB34-1 |
3,510 |
|
- | Standard | 1200V | 171A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1200V | - | Chassis Mount | Module | BG-PB34-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GP 1.2KV 104A BG-PB50ND-1 |
6,102 |
|
- | Standard | 1200V | 104A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1200V | - | Chassis Mount | Module | BG-PB50ND-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 2.2KV 1030A |
4,950 |
|
- | Standard | 2200V | 1030A | 1.11V @ 10000A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 2200V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE GP 1.8KV 171A BG-PB34-1 |
7,452 |
|
- | Standard | 1800V | 171A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1800V | - | Chassis Mount | Module | BG-PB34-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GP 1.4KV 260A BG-PB50ND-1 |
7,992 |
|
- | Standard | 1400V | 260A | - | Standard Recovery >500ns, > 200mA (Io) | - | 30mA @ 1400V | - | Chassis Mount | Module | BG-PB50ND-1 | -40°C ~ 135°C |