Microsemi Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerMicrosemi Corporation
Records 2,560
Page 4/86
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE GEN PURP 100V 3A D5B |
6,600 |
|
- | Standard | 100V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 100V | - | Surface Mount | E-MELF | D-5B | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 1A D5A |
16,356 |
|
Military, MIL-PRF-19500/437 | Standard | 200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 200V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 1.2KV 43A TO247 |
7,362 |
|
- | Silicon Carbide Schottky | 1200V | 43A (DC) | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 104pF @ 400V, 1MHz | Through Hole | TO-247-2 | TO-247 | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 1A D5A |
8,088 |
|
Military, MIL-PRF-19500/427 | Standard | 200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 200V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
6,246 |
|
Military, MIL-PRF-19500/427 | Standard | 400V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | 35pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 70V 33MA DO213AA |
19,332 |
|
Military, MIL-PRF-19500/444 | Schottky | 70V | 33mA | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 100V | 2pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
8,676 |
|
Military, MIL-PRF-19500/427 | Standard | 400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 3A AXIAL |
17,916 |
|
Military, MIL-PRF-19500/424 | Standard | 600V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 2µA @ 600V | - | Through Hole | B, Axial | - | - |
|
|
|
Microsemi |
DIODE GP 1.5KV 250MA S AXIAL |
7,620 |
|
Military, MIL-PRF-19500/279 | Standard | 1500V | 250mA | 5V @ 250mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 1500V | - | Through Hole | S, Axial | S, Axial | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 150MA DO204AH |
1,929 |
|
- | Standard | 50V | 150mA | 880mV @ 20mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 50nA @ 50V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 150V 1A AXIAL |
354 |
|
Military, MIL-PRF-19500/477 | Standard | 150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 100V 3A AXIAL |
1,894 |
|
Military, MIL-PRF-19500/477 | Standard | 100V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 60pF @ 10V, 1MHz | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 150V 1A D5A |
17,166 |
|
Military, MIL-PRF-19500/477 | Standard | 150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 75V 300MA DO204AH |
18,540 |
|
Military, MIL-PRF-19500/578 | Standard | 75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 300MA DO204AH |
8,652 |
|
Military, MIL-PRF-19500/609 | Standard | 50V | 300mA | 1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 80V DO35 |
14,880 |
|
Military, MIL-PRF-19500/403 | Standard | 80V | - | 1.1V @ 300mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 100nA @ 75V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 225V 200MA DO35 |
6,102 |
|
Military, MIL-PRF-19500/118 | Standard | 225V | 200mA (DC) | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 25nA @ 225V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 200MA DO35 |
8,460 |
|
Military, MIL-S-19500-241 | Standard | - | 200mA (DC) | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 1nA @ 125V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 3A AXIAL |
9,324 |
|
Military, MIL-PRF-19500/420 | Standard | 600V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 500A LP4 |
6,252 |
|
- | Standard | 600V | 500A | 1.8V @ 500A | Fast Recovery =< 500ns, > 200mA (Io) | 115ns | 2.5mA @ 600V | - | Chassis Mount | LP4 | LP4 | - |
|
|
|
Microsemi |
DIODE GEN PURP 1.2KV 450A LP4 |
6,444 |
|
- | Standard | 1200V | 450A | 2.5V @ 500A | Fast Recovery =< 500ns, > 200mA (Io) | 110ns | 2.5mA @ 1200V | - | Chassis Mount | LP4 | LP4 | - |
|
|
|
Microsemi |
DIODE GEN PURP 225V 400MA DO35 |
9,672 |
|
- | Standard | 225V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 225V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 100V 1A AXIAL |
6,390 |
|
- | Standard | 100V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 75V 300MA D5D |
6,030 |
|
- | Standard | 75V | 300mA (DC) | 1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | - | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 150V 6A AXIAL |
79 |
|
- | Standard | 150V | 6A | 925mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | - | Through Hole | B, Axial | - | 175°C (Max) |
|
|
|
Microsemi |
DIODE GEN PURP 100V 6A AXIAL |
7,902 |
|
- | Standard | 100V | 6A | 925mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | - | Through Hole | Axial | Axial | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 15A TO220 |
9,516 |
|
- | Standard | 600V | 15A | 2.4V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 19ns | 25µA @ 600V | - | Through Hole | TO-220-2 | TO-220 [K] | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 200MA DO35 |
7,920 |
|
- | Standard | 50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 1.2KV 15A TO220 |
18,168 |
|
- | Standard | 1200V | 15A | 3.3V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 240ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | TO-220 [K] | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 30A TO220 |
7,932 |
|
- | Standard | 600V | 30A | 2.4V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 25µA @ 600V | - | Through Hole | TO-220-2 | TO-220 [K] | -55°C ~ 175°C |