1N1190
For Reference Only
| Part Number | 1N1190 | ||||||||||||||||||
| PNEDA Part # | 1N1190 | ||||||||||||||||||
| Description | DIODE GEN PURP 600V 35A DO5 | ||||||||||||||||||
| Manufacturer | GeneSiC Semiconductor | ||||||||||||||||||
| Unit Price |
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| In Stock | 136 | ||||||||||||||||||
| Warehouses | Shipped from Hong Kong SAR | ||||||||||||||||||
| Estimated Delivery | Jun 25 - Jun 30 (Choose Expedited Shipping) | ||||||||||||||||||
| Guarantee | Up to 1 year [PNEDA-Warranty]* | ||||||||||||||||||
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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1N1190 Resources
| Brand | GeneSiC Semiconductor |
| ECAD Module |
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| Mfr. Part Number | 1N1190 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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1N1190 Specifications
| Manufacturer | GeneSiC Semiconductor |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 35A |
| Voltage - Forward (Vf) (Max) @ If | 1.2V @ 35A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 10µA @ 50V |
| Capacitance @ Vr, F | - |
| Mounting Type | Chassis, Stud Mount |
| Package / Case | DO-203AB, DO-5, Stud |
| Supplier Device Package | DO-5 |
| Operating Temperature - Junction | -65°C ~ 190°C |
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 30V Current - Average Rectified (Io) 200mA (DC) Voltage - Forward (Vf) (Max) @ If 650mV @ 50mA Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) 5ns Current - Reverse Leakage @ Vr 500nA @ 25V Capacitance @ Vr, F 7pF @ 1V, 1MHz Mounting Type Through Hole Package / Case DO-204AH, DO-35, Axial Supplier Device Package DO-35 Operating Temperature - Junction 125°C (Max) |
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