1N4446_T50R
For Reference Only
| Part Number | 1N4446_T50R |
| PNEDA Part # | 1N4446_T50R |
| Description | DIODE GEN PURP 100V 200MA DO35 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 7,182 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 15 - Jun 20 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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1N4446_T50R Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | 1N4446_T50R |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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1N4446_T50R Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) | 200mA |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 20mA |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 4ns |
| Current - Reverse Leakage @ Vr | 25nA @ 20V |
| Capacitance @ Vr, F | 4pF @ 0V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | DO-204AH, DO-35, Axial |
| Supplier Device Package | DO-35 |
| Operating Temperature - Junction | 175°C (Max) |
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.3V @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 100ns Current - Reverse Leakage @ Vr 10µA @ 100V Capacitance @ Vr, F 12pF @ 4V, 1MHz Mounting Type Through Hole Package / Case DO-204AL, DO-41, Axial Supplier Device Package DO-204AL (DO-41) Operating Temperature - Junction -50°C ~ 125°C |
Manufacturer Micro Commercial Co Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) 3A Voltage - Forward (Vf) (Max) @ If 1.7V @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 75ns Current - Reverse Leakage @ Vr 10µA @ 800V Capacitance @ Vr, F 50pF @ 4V, 1MHz Mounting Type Through Hole Package / Case DO-201AD, Axial Supplier Device Package DO-201AD Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series Automotive, AEC-Q101, eSMP®, TMBS® Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 35A Voltage - Forward (Vf) (Max) @ If 900mV @ 35A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 800µA @ 100V Capacitance @ Vr, F 2500pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package SlimDPAK Operating Temperature - Junction -40°C ~ 175°C |
