1N4937GPE-E3/54
For Reference Only
| Part Number | 1N4937GPE-E3/54 |
| PNEDA Part # | 1N4937GPE-E3-54 |
| Description | DIODE GEN PURP 600V 1A DO204AL |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 2,052 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 16 - Jun 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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1N4937GPE-E3/54 Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | 1N4937GPE-E3/54 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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1N4937GPE-E3/54 Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | SUPERECTIFIER® |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.2V @ 1A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 200ns |
| Current - Reverse Leakage @ Vr | 5µA @ 600V |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | DO-204AL, DO-41, Axial |
| Supplier Device Package | DO-204AL (DO-41) |
| Operating Temperature - Junction | -65°C ~ 175°C |
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Manufacturer Bourns Inc. Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.3V @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 300ns Current - Reverse Leakage @ Vr 5µA @ 200V Capacitance @ Vr, F 15pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case Chip, Concave Terminals Supplier Device Package 1408 Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 60A Voltage - Forward (Vf) (Max) @ If 840mV @ 60A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 5mA @ 20V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AB, DO-5, Stud Supplier Device Package DO-5 Operating Temperature - Junction -65°C ~ 150°C |
Manufacturer Infineon Technologies Series CoolSiC™+ Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 1.7V @ 10A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 140µA @ 600V Capacitance @ Vr, F 480pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package D2PAK Operating Temperature - Junction -55°C ~ 175°C |
