1N5393GHB0G
For Reference Only
| Part Number | 1N5393GHB0G |
| PNEDA Part # | 1N5393GHB0G |
| Description | DIODE GEN PURP 200V 1.5A DO204AC |
| Manufacturer | Taiwan Semiconductor Corporation |
| Unit Price | Request a Quote |
| In Stock | 7,920 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 17 - Jun 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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1N5393GHB0G Resources
| Brand | Taiwan Semiconductor Corporation |
| ECAD Module |
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| Mfr. Part Number | 1N5393GHB0G |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
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1N5393GHB0G Specifications
| Manufacturer | Taiwan Semiconductor Corporation |
| Series | Automotive, AEC-Q101 |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Current - Average Rectified (Io) | 1.5A |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 1.5A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 5µA @ 200V |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | DO-204AC, DO-15, Axial |
| Supplier Device Package | DO-204AC (DO-15) |
| Operating Temperature - Junction | -55°C ~ 150°C |
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Manufacturer Powerex Inc. Series - Diode Type Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 220A Voltage - Forward (Vf) (Max) @ If 2.75V @ 800A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 500ns Current - Reverse Leakage @ Vr 50mA @ 1000V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-205AB, DO-9, Stud Supplier Device Package DO-205AB, DO-9 Operating Temperature - Junction -45°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 120V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 870mV @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 50µA @ 120V Capacitance @ Vr, F 100pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AD Supplier Device Package MicroSMP (DO-219AD) Operating Temperature - Junction -40°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 1.5A Voltage - Forward (Vf) (Max) @ If 1.4V @ 1.5A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 2µs Current - Reverse Leakage @ Vr 5µA @ 400V Capacitance @ Vr, F 15pF @ 4V, 1MHz Mounting Type Through Hole Package / Case DO-204AC, DO-15, Axial Supplier Device Package DO-204AC (DO-15) Operating Temperature - Junction -65°C ~ 175°C |
