1N5399GP-E3/73
For Reference Only
| Part Number | 1N5399GP-E3/73 |
| PNEDA Part # | 1N5399GP-E3-73 |
| Description | DIODE GEN PURP 1KV 1.5A DO204 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 53,580 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 15 - May 20 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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1N5399GP-E3/73 Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | 1N5399GP-E3/73 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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1N5399GP-E3/73 Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1000V |
| Current - Average Rectified (Io) | 1.5A |
| Voltage - Forward (Vf) (Max) @ If | 1.4V @ 1.5A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2µs |
| Current - Reverse Leakage @ Vr | 5µA @ 1000V |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | DO-204AC, DO-15, Axial |
| Supplier Device Package | DO-204AC (DO-15) |
| Operating Temperature - Junction | -65°C ~ 175°C |
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Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 3A Voltage - Forward (Vf) (Max) @ If 580mV @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 300µA @ 60V Capacitance @ Vr, F 102pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case SOD-128 Supplier Device Package M-FLAT (2.4x3.8) Operating Temperature - Junction -40°C ~ 150°C |
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