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1N5402GHB0G

1N5402GHB0G

For Reference Only

Part Number 1N5402GHB0G
PNEDA Part # 1N5402GHB0G
Description DIODE GEN PURP 200V 3A DO201AD
Manufacturer Taiwan Semiconductor Corporation
Unit Price Request a Quote
In Stock 8,172
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

1N5402GHB0G Resources

Brand Taiwan Semiconductor Corporation
ECAD Module ECAD
Mfr. Part Number1N5402GHB0G
CategorySemiconductorsDiodes & RectifiersRectifiers - Single

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1N5402GHB0G Specifications

ManufacturerTaiwan Semiconductor Corporation
SeriesAutomotive, AEC-Q101
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)200V
Current - Average Rectified (Io)3A
Voltage - Forward (Vf) (Max) @ If1V @ 3A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr5µA @ 200V
Capacitance @ Vr, F25pF @ 4V, 1MHz
Mounting TypeThrough Hole
Package / CaseDO-201AD, Axial
Supplier Device PackageDO-201AD
Operating Temperature - Junction-55°C ~ 150°C

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