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1N5553US

1N5553US

For Reference Only

Part Number 1N5553US
PNEDA Part # 1N5553US
Description DIODE GEN PURP 800V 3A B-MELF
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 6,768
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 23 - Jun 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

1N5553US Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part Number1N5553US
CategorySemiconductorsDiodes & RectifiersRectifiers - Single

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1N5553US Specifications

ManufacturerMicrosemi Corporation
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)800V
Current - Average Rectified (Io)3A
Voltage - Forward (Vf) (Max) @ If1.2V @ 9A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)2µs
Current - Reverse Leakage @ Vr1µA @ 800V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseSQ-MELF, B
Supplier Device PackageB, SQ-MELF
Operating Temperature - Junction-65°C ~ 175°C

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