1N5617US
For Reference Only
| Part Number | 1N5617US |
| PNEDA Part # | 1N5617US |
| Description | DIODE GEN PURP 400V 1A D5A |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 7,284 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 2 - May 7 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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1N5617US Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | 1N5617US |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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1N5617US Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 400V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.6V @ 3A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150ns |
| Current - Reverse Leakage @ Vr | 500nA @ 400V |
| Capacitance @ Vr, F | 35pF @ 12V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | SQ-MELF, A |
| Supplier Device Package | D-5A |
| Operating Temperature - Junction | -65°C ~ 175°C |
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Manufacturer Vishay Semiconductor Diodes Division Series Automotive, AEC-Q101, FRED Pt® Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 15A Voltage - Forward (Vf) (Max) @ If 1.07V @ 15A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 210ns Current - Reverse Leakage @ Vr 15µA @ 600V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263 (D2Pak) Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer Infineon Technologies Series CoolSiC™+ Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 650V Current - Average Rectified (Io) 5A (DC) Voltage - Forward (Vf) (Max) @ If 1.8V @ 5A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 830µA @ 650V Capacitance @ Vr, F 160pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package PG-TO263-2 Operating Temperature - Junction -55°C ~ 175°C |
