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1N6080US

1N6080US

For Reference Only

Part Number 1N6080US
PNEDA Part # 1N6080US
Description DIODE GEN PURP 100V 2A G-MELF
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 2,592
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 13 - May 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

1N6080US Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part Number1N6080US
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
1N6080US, 1N6080US Datasheet (Total Pages: 3, Size: 135.43 KB)
PDF1N6080US Datasheet Cover
1N6080US Datasheet Page 2 1N6080US Datasheet Page 3

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1N6080US Specifications

ManufacturerMicrosemi Corporation
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io)2A
Voltage - Forward (Vf) (Max) @ If1.5V @ 37.7A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)30ns
Current - Reverse Leakage @ Vr10µA @ 100V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseSQ-MELF, G
Supplier Device PackageG-MELF (D-5C)
Operating Temperature - Junction-65°C ~ 155°C

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