1N6483HE3/96
For Reference Only
| Part Number | 1N6483HE3/96 |
| PNEDA Part # | 1N6483HE3-96 |
| Description | DIODE GEN PURP 800V 1A DO213AB |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 4,590 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 23 - May 28 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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1N6483HE3/96 Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | 1N6483HE3/96 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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1N6483HE3/96 Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | SUPERECTIFIER® |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 800V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 1A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 10µA @ 800V |
| Capacitance @ Vr, F | 8pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-213AB, MELF (Glass) |
| Supplier Device Package | DO-213AB |
| Operating Temperature - Junction | -65°C ~ 175°C |
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Manufacturer Micro Commercial Co Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If - Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 200ns Current - Reverse Leakage @ Vr 5µA @ 400V Capacitance @ Vr, F 15pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-214AC, SMA Supplier Device Package DO-214AC (SMA) Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer ON Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 500mA Voltage - Forward (Vf) (Max) @ If 1V @ 100mA Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 25nA @ 175V Capacitance @ Vr, F 6pF @ 0V, 1MHz Mounting Type Through Hole Package / Case DO-204AH, DO-35, Axial Supplier Device Package DO-35 Operating Temperature - Junction 175°C (Max) |
Manufacturer Taiwan Semiconductor Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 150V Current - Average Rectified (Io) 4A Voltage - Forward (Vf) (Max) @ If 1V @ 4A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 35ns Current - Reverse Leakage @ Vr 5µA @ 150V Capacitance @ Vr, F 100pF @ 4V, 1MHz Mounting Type Through Hole Package / Case DO-201AD, Axial Supplier Device Package DO-201AD Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Microsemi Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 700V Current - Average Rectified (Io) 3A Voltage - Forward (Vf) (Max) @ If 1.2V @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 60ns Current - Reverse Leakage @ Vr 10µA @ 700V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case DO-214AB, SMC Supplier Device Package DO-214AB Operating Temperature - Junction -55°C ~ 175°C |
