1N8035-GA
For Reference Only
| Part Number | 1N8035-GA |
| PNEDA Part # | 1N8035-GA |
| Description | DIODE SCHOTTKY 650V 14.6A TO276 |
| Manufacturer | GeneSiC Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 4,428 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 27 - Jul 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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1N8035-GA Resources
| Brand | GeneSiC Semiconductor |
| ECAD Module |
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| Mfr. Part Number | 1N8035-GA |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
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Logistics Mode
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1N8035-GA Specifications
| Manufacturer | GeneSiC Semiconductor |
| Series | - |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650V |
| Current - Average Rectified (Io) | 14.6A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.5V @ 15A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 5µA @ 650V |
| Capacitance @ Vr, F | 1107pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-276AA |
| Supplier Device Package | TO-276 |
| Operating Temperature - Junction | -55°C ~ 250°C |
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Manufacturer Microsemi Corporation Series * Diode Type - Voltage - DC Reverse (Vr) (Max) - Current - Average Rectified (Io) - Voltage - Forward (Vf) (Max) @ If - Speed - Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr - Capacitance @ Vr, F - Mounting Type - Package / Case - Supplier Device Package - Operating Temperature - Junction - |
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