1SS367,H3F
For Reference Only
| Part Number | 1SS367,H3F |
| PNEDA Part # | 1SS367-H3F |
| Description | DIODE SCHOTTKY 10V 100MA SC76 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 67,602 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 14 - Jun 19 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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1SS367 Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
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| Mfr. Part Number | 1SS367,H3F |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
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1SS367 Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 10V |
| Current - Average Rectified (Io) | 100mA |
| Voltage - Forward (Vf) (Max) @ If | 500mV @ 100mA |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 20µA @ 10V |
| Capacitance @ Vr, F | 40pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | SC-76, SOD-323 |
| Supplier Device Package | - |
| Operating Temperature - Junction | 125°C (Max) |
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Manufacturer Microsemi Corporation Series * Diode Type - Voltage - DC Reverse (Vr) (Max) - Current - Average Rectified (Io) - Voltage - Forward (Vf) (Max) @ If - Speed - Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr - Capacitance @ Vr, F - Mounting Type - Package / Case - Supplier Device Package - Operating Temperature - Junction - |
