1SS385,LF(CT
For Reference Only
| Part Number | 1SS385,LF(CT |
| PNEDA Part # | 1SS385-LF-CT |
| Description | SMALL-SIGNAL SCHOTTKY BARRIER DI |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 3,780 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 21 - Jun 26 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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1SS385 Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
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| Mfr. Part Number | 1SS385,LF(CT |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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1SS385 Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | * |
| Diode Type | - |
| Voltage - DC Reverse (Vr) (Max) | - |
| Current - Average Rectified (Io) | - |
| Voltage - Forward (Vf) (Max) @ If | - |
| Speed | - |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | - |
| Capacitance @ Vr, F | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
| Operating Temperature - Junction | - |
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1400V Current - Average Rectified (Io) 70A Voltage - Forward (Vf) (Max) @ If 1.46V @ 220A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr - Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AB, DO-5, Stud Supplier Device Package DO-203AB (DO-5) Operating Temperature - Junction -65°C ~ 150°C |
Manufacturer Microsemi Corporation Series Military, MIL-PRF-19500/477 Diode Type Standard Voltage - DC Reverse (Vr) (Max) 150V Current - Average Rectified (Io) 2.5A Voltage - Forward (Vf) (Max) @ If 975mV @ 2.5A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 25ns Current - Reverse Leakage @ Vr 1µA @ 150V Capacitance @ Vr, F 25pF @ 10V, 1MHz Mounting Type Through Hole Package / Case A, Axial Supplier Device Package - Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer Microsemi Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 4A Voltage - Forward (Vf) (Max) @ If 1.1V @ 4A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 400ns Current - Reverse Leakage @ Vr 5µA @ 400V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case B, Axial Supplier Device Package - Operating Temperature - Junction -65°C ~ 175°C |
