1SS387,L3F
For Reference Only
| Part Number | 1SS387,L3F |
| PNEDA Part # | 1SS387-L3F |
| Description | DIODE GEN PURP 80V 100MA ESC |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 69,486 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 5 - May 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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1SS387 Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
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| Mfr. Part Number | 1SS387,L3F |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
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1SS387 Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 80V |
| Current - Average Rectified (Io) | 100mA |
| Voltage - Forward (Vf) (Max) @ If | 1.2V @ 100mA |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 4ns |
| Current - Reverse Leakage @ Vr | 500nA @ 80V |
| Capacitance @ Vr, F | 3pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | SC-79, SOD-523 |
| Supplier Device Package | ESC |
| Operating Temperature - Junction | 125°C (Max) |
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Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) - Current - Average Rectified (Io) 1720A Voltage - Forward (Vf) (Max) @ If - Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 200mA @ 4500V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case DO-200AD Supplier Device Package BG-D10026K-1 Operating Temperature - Junction -40°C ~ 140°C |
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