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2224-12LP

2224-12LP

For Reference Only

Part Number 2224-12LP
PNEDA Part # 2224-12LP
Description RF POWER TRANSISTOR
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 2,016
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 3 - Jun 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2224-12LP Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part Number2224-12LP
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF

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2224-12LP Specifications

ManufacturerMicrosemi Corporation
Series-
Transistor Type-
Voltage - Collector Emitter Breakdown (Max)-
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Gain-
Power - Max-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Current - Collector (Ic) (Max)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

The Products You May Be Interested In

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

2.8V

Frequency - Transition

25GHz

Noise Figure (dB Typ @ f)

0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz

Gain

-

Power - Max

234mW

DC Current Gain (hFE) (Min) @ Ic, Vce

235 @ 10mA, 2V

Current - Collector (Ic) (Max)

100mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-343F

Supplier Device Package

4-DFP

10A030

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

24V

Frequency - Transition

2.5GHz

Noise Figure (dB Typ @ f)

-

Gain

7.8dB ~ 8.5dB

Power - Max

13W

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 200mA, 5V

Current - Collector (Ic) (Max)

1.5A

Operating Temperature

200°C (TJ)

Mounting Type

Stud Mount

Package / Case

55FT

Supplier Device Package

55FT

80277H

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Transistor Type

-

Voltage - Collector Emitter Breakdown (Max)

-

Frequency - Transition

-

Noise Figure (dB Typ @ f)

-

Gain

-

Power - Max

-

DC Current Gain (hFE) (Min) @ Ic, Vce

-

Current - Collector (Ic) (Max)

-

Operating Temperature

-

Mounting Type

-

Package / Case

-

Supplier Device Package

-

BFG35,115

NXP

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

18V

Frequency - Transition

4GHz

Noise Figure (dB Typ @ f)

-

Gain

-

Power - Max

1W

DC Current Gain (hFE) (Min) @ Ic, Vce

25 @ 100mA, 10V

Current - Collector (Ic) (Max)

150mA

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-261-4, TO-261AA

Supplier Device Package

SOT-223

BFU550WF

NXP

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

12V

Frequency - Transition

11GHz

Noise Figure (dB Typ @ f)

1.3dB @ 1.8GHz

Gain

12dB

Power - Max

450mW

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 15mA, 8V

Current - Collector (Ic) (Max)

50mA

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

SOT-323-3

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