2N2857
For Reference Only
| Part Number | 2N2857 |
| PNEDA Part # | 2N2857 |
| Description | RF TRANS NPN 15V 1.9GHZ TO72 |
| Manufacturer | Central Semiconductor Corp |
| Unit Price | Request a Quote |
| In Stock | 23,202 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 14 - Jun 19 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2N2857 Resources
| Brand | Central Semiconductor Corp |
| ECAD Module |
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| Mfr. Part Number | 2N2857 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
| Datasheet |
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2N2857 Specifications
| Manufacturer | Central Semiconductor Corp |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Frequency - Transition | 1.9GHz |
| Noise Figure (dB Typ @ f) | 4.5dB @ 450MHz |
| Gain | - |
| Power - Max | 200mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 3mA, 1V |
| Current - Collector (Ic) (Max) | 40mA |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-206AF, TO-72-4 Metal Can |
| Supplier Device Package | TO-72 |
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Manufacturer Infineon Technologies Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition 5GHz Noise Figure (dB Typ @ f) 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz Gain 11.5dB ~ 17dB Power - Max 280mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 15mA, 8V Current - Collector (Ic) (Max) 45mA Operating Temperature - Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package PG-SOT323-3 |
Manufacturer CEL Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 6.5GHz Noise Figure (dB Typ @ f) 1.8dB @ 1GHz Gain 10dB Power - Max 1.2W DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA, 10V Current - Collector (Ic) (Max) 100mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-243AA Supplier Device Package SOT-89 |
Manufacturer Diodes Incorporated Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 25V Frequency - Transition 650MHz Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 500MHz Gain - Power - Max 330mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA, 10V Current - Collector (Ic) (Max) 25mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
