2N333AT2
For Reference Only
| Part Number | 2N333AT2 |
| PNEDA Part # | 2N333AT2 |
| Description | NPN POWER SILICON TRANSISTORS |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 3,526 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 4 - May 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
2N333AT2 Resources
| Brand | Microsemi |
| ECAD Module |
|
| Mfr. Part Number | 2N333AT2 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- 2N333AT2 Datasheet
- where to find 2N333AT2
- Microsemi
- Microsemi 2N333AT2
- 2N333AT2 PDF Datasheet
- 2N333AT2 Stock
- 2N333AT2 Pinout
- Datasheet 2N333AT2
- 2N333AT2 Supplier
- Microsemi Distributor
- 2N333AT2 Price
- 2N333AT2 Distributor
2N333AT2 Specifications
| Manufacturer | Microsemi Corporation |
| Series | * |
| Transistor Type | - |
| Current - Collector (Ic) (Max) | - |
| Voltage - Collector Emitter Breakdown (Max) | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Power - Max | - |
| Frequency - Transition | - |
| Operating Temperature | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
The Products You May Be Interested In
|
Manufacturer Diodes Incorporated Series - Transistor Type PNP Current - Collector (Ic) (Max) 200mA Voltage - Collector Emitter Breakdown (Max) 400V Vce Saturation (Max) @ Ib, Ic 500mV @ 6mA, 50mA Current - Collector Cutoff (Max) 100nA DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA, 10V Power - Max 1W Frequency - Transition 50MHz Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-243AA Supplier Device Package SOT-89-3 |
Manufacturer Central Semiconductor Corp Series - Transistor Type NPN Current - Collector (Ic) (Max) - Voltage - Collector Emitter Breakdown (Max) 15V Vce Saturation (Max) @ Ib, Ic - Current - Collector Cutoff (Max) 25µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 1V Power - Max - Frequency - Transition 400MHz Operating Temperature - Mounting Type Through Hole Package / Case TO-206AA, TO-18-3 Metal Can Supplier Device Package TO-18 |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 1A Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA, 2V Power - Max 900mW Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92MOD |
Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 250mV @ 2.5mA, 25mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 25mA, 1V Power - Max 225mW Frequency - Transition 95MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 (TO-236) |
Manufacturer Sanken Series - Transistor Type NPN Current - Collector (Ic) (Max) 15A Voltage - Collector Emitter Breakdown (Max) 230V Vce Saturation (Max) @ Ib, Ic 500mV @ 500mA, 5A Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 3A, 4V Power - Max 160W Frequency - Transition 20MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-3P-3, SC-65-3 Supplier Device Package TO-3P |
