2N335T2
For Reference Only
| Part Number | 2N335T2 |
| PNEDA Part # | 2N335T2 |
| Description | NPN POWER SILICON TRANSISTORS |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 5,022 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 4 - May 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2N335T2 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | 2N335T2 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- Orders cannot be canceled after shipping the packages.
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2N335T2 Specifications
| Manufacturer | Microsemi Corporation |
| Series | * |
| Transistor Type | - |
| Current - Collector (Ic) (Max) | - |
| Voltage - Collector Emitter Breakdown (Max) | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Power - Max | - |
| Frequency - Transition | - |
| Operating Temperature | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
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Manufacturer STMicroelectronics Series - Transistor Type NPN Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 400V Vce Saturation (Max) @ Ib, Ic 1.5V @ 400mA, 1.6A Current - Collector Cutoff (Max) 250µA DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 500mA, 5V Power - Max 45W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-225AA, TO-126-3 Supplier Device Package SOT-32-3 |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Current - Collector (Ic) (Max) 4A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 1.5V @ 300mA, 3A Current - Collector Cutoff (Max) 30µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA, 5V Power - Max 25W Frequency - Transition 8MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 200mA Voltage - Collector Emitter Breakdown (Max) 25V Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA Current - Collector Cutoff (Max) 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 2mA, 10V Power - Max 625mW Frequency - Transition - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
