2N5551G
For Reference Only
| Part Number | 2N5551G |
| PNEDA Part # | 2N5551G |
| Description | TRANS NPN 160V 0.6A TO-92 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 7,506 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 1 - May 6 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2N5551G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | 2N5551G |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
| Datasheet |
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2N5551G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 600mA |
| Voltage - Collector Emitter Breakdown (Max) | 160V |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Power - Max | 625mW |
| Frequency - Transition | 300MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
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Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 10A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A Current - Collector Cutoff (Max) 10µA DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A, 1V Power - Max 2W Frequency - Transition 50MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package D2PAK |
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