2N5881
For Reference Only
| Part Number | 2N5881 |
| PNEDA Part # | 2N5881 |
| Description | NPN POWER TRANSISTOR SILICON AMP |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 8,730 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 6 - May 11 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2N5881 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | 2N5881 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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2N5881 Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 15A |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Power - Max | 160W |
| Frequency - Transition | - |
| Operating Temperature | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
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Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 15A Voltage - Collector Emitter Breakdown (Max) 250V Vce Saturation (Max) @ Ib, Ic 1V @ 500mA, 5A Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 3A, 5V Power - Max 150W Frequency - Transition 30MHz Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-3P-3, SC-65-3 Supplier Device Package TO-3P-3L |
Manufacturer Rohm Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 150mA Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 6V Power - Max 150mW Frequency - Transition 180MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-75, SOT-416 Supplier Device Package EMT3 |
