2N6427G
For Reference Only
| Part Number | 2N6427G |
| PNEDA Part # | 2N6427G |
| Description | TRANS NPN DARL 40V 0.5A TO92 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 2,250 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 1 - May 6 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2N6427G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | 2N6427G |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
| Datasheet |
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2N6427G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | NPN - Darlington |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500µA, 500mA |
| Current - Collector Cutoff (Max) | 1μA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 100mA, 5V |
| Power - Max | 625mW |
| Frequency - Transition | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
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Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 600mA Voltage - Collector Emitter Breakdown (Max) 160V Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA Current - Collector Cutoff (Max) 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V Power - Max 625mW Frequency - Transition 300MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer Rohm Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 6V Power - Max 200mW Frequency - Transition 350MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-85 Supplier Device Package UMT3F |
Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 700mA Voltage - Collector Emitter Breakdown (Max) 150V Vce Saturation (Max) @ Ib, Ic 400mV @ 20mA, 200mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 50mA, 2V Power - Max 800mW Frequency - Transition 50MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
