2N6519BU
For Reference Only
| Part Number | 2N6519BU |
| PNEDA Part # | 2N6519BU |
| Description | TRANS PNP 300V 0.5A TO-92 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 4,878 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 12 - Jun 17 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2N6519BU Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | 2N6519BU |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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2N6519BU Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 300V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 10V |
| Power - Max | 625mW |
| Frequency - Transition | 200MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
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Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 200mA Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA Current - Collector Cutoff (Max) - DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V Power - Max 625mW Frequency - Transition 250MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
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Manufacturer STMicroelectronics Series - Transistor Type PNP Current - Collector (Ic) (Max) 8A Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 1.5V @ 300mA, 3A Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 3A, 4V Power - Max 80W Frequency - Transition 20MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-3P-3, SC-65-3 Supplier Device Package TO-3P |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 180V Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A Current - Collector Cutoff (Max) 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V Power - Max 2W Frequency - Transition 200MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 32V Vce Saturation (Max) @ Ib, Ic 250mV @ 500µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V Power - Max 350mW Frequency - Transition 200MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
