2N6661JTXV02
For Reference Only
| Part Number | 2N6661JTXV02 |
| PNEDA Part # | 2N6661JTXV02 |
| Description | MOSFET N-CH 90V 0.86A TO-205 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 3,420 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 20 - Jun 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2N6661JTXV02 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
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| Mfr. Part Number | 2N6661JTXV02 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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2N6661JTXV02 Specifications
| Manufacturer | Vishay Siliconix |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 90V |
| Current - Continuous Drain (Id) @ 25°C | 860mA (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 1A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 725mW (Ta), 6.25W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-39 |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
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