2N6678T1
For Reference Only
| Part Number | 2N6678T1 |
| PNEDA Part # | 2N6678T1 |
| Description | NPN TRANSISTOR |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 6,156 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 30 - May 5 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2N6678T1 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | 2N6678T1 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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2N6678T1 Specifications
| Manufacturer | Microsemi Corporation |
| Series | * |
| Transistor Type | - |
| Current - Collector (Ic) (Max) | - |
| Voltage - Collector Emitter Breakdown (Max) | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Power - Max | - |
| Frequency - Transition | - |
| Operating Temperature | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
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Manufacturer Microsemi Corporation Series - Transistor Type NPN Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 45V Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA Current - Collector Cutoff (Max) 10nA DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1mA, 5V Power - Max 360mW Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Surface Mount Package / Case 4-SMD, No Lead Supplier Device Package UB |
Manufacturer Nexperia USA Inc. Series - Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A Current - Collector Cutoff (Max) 100nA DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 500mA, 5V Power - Max 250mW Frequency - Transition 150MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package TO-236AB |
