Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

2N7000G

2N7000G

For Reference Only

Part Number 2N7000G
PNEDA Part # 2N7000G
Description MOSFET N-CH 60V 200MA TO-92
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,984
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2N7000G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part Number2N7000G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
2N7000G, 2N7000G Datasheet (Total Pages: 4, Size: 92.51 KB)
PDF2N7000G Datasheet Cover
2N7000G Datasheet Page 2 2N7000G Datasheet Page 3 2N7000G Datasheet Page 4

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • 2N7000G Datasheet
  • where to find 2N7000G
  • ON Semiconductor

  • ON Semiconductor 2N7000G
  • 2N7000G PDF Datasheet
  • 2N7000G Stock

  • 2N7000G Pinout
  • Datasheet 2N7000G
  • 2N7000G Supplier

  • ON Semiconductor Distributor
  • 2N7000G Price
  • 2N7000G Distributor

2N7000G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds60pF @ 25V
FET Feature-
Power Dissipation (Max)350mW (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA)

The Products You May Be Interested In

NVMFS6B05NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

44nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

3100pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 165W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN

STH160N4LF6-2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

DeepGATE™, STripFET™ VI

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

2.2mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

181nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8130pF @ 20V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

H2Pak-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

DMN2058U-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 10V

Rds On (Max) @ Id, Vgs

35mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.7nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

281pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.13W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

SK8603180L

Panasonic Electronic Components

Manufacturer

Panasonic Electronic Components

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

15A (Ta), 39A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7.1mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3V @ 1.45mA

Gate Charge (Qg) (Max) @ Vgs

9.2nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1680pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.4W (Ta), 19W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

HSO8-F4-B

Package / Case

8-PowerSMD, Flat Leads

FDPF51N25YDTU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UniFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

51A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

60mOhm @ 25.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3410pF @ 25V

FET Feature

-

Power Dissipation (Max)

38W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F-3 (Y-Forming)

Package / Case

TO-220-3 Full Pack, Formed Leads

Recently Sold

KSZ9031RNXIC

KSZ9031RNXIC

Microchip Technology

IC TRANSCEIVER FULL 4/4 48QFN

ADM1087AKSZ-REEL7

ADM1087AKSZ-REEL7

Analog Devices

IC SIMPLE SEQUENCER OD SC70-6

74VHC14MTCX

74VHC14MTCX

ON Semiconductor

IC INVERTER SCHMITT 6CH 14TSSOP

CTX01-15473

CTX01-15473

Eaton - Electronics Division

FIXED INDUCTOR

7443556350

7443556350

Wurth Electronics

FIXED IND 3.5UH 22.5A 3.1 MOHM

TDA08H0SB1

TDA08H0SB1

C&K

SWITCH SLIDE DIP SPST 25MA 24V

MMSZ4683T1G

MMSZ4683T1G

ON Semiconductor

DIODE ZENER 3V 500MW SOD123

MPZ2012S300AT000

MPZ2012S300AT000

TDK

FERRITE BEAD 30 OHM 0805 1LN

NC7WZ17P6X

NC7WZ17P6X

ON Semiconductor

IC BUF NON-INVERT 5.5V SC70-6

TOP224PN

TOP224PN

Power Integrations

IC OFFLINE SWIT PWM OCP HV 8DIP

LTV-817S-TA1-D

LTV-817S-TA1-D

Lite-On Inc.

OPTOISOLATR 5KV TRANSISTOR 4-SMD

PIC12F1822-I/SN

PIC12F1822-I/SN

Microchip Technology

IC MCU 8BIT 3.5KB FLASH 8SOIC