Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

2N7000RLRPG

2N7000RLRPG

For Reference Only

Part Number 2N7000RLRPG
PNEDA Part # 2N7000RLRPG
Description MOSFET N-CH 60V 200MA TO-92
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,202
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 28 - May 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2N7000RLRPG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part Number2N7000RLRPG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
2N7000RLRPG, 2N7000RLRPG Datasheet (Total Pages: 4, Size: 71.74 KB)
PDF2N7000RLRPG Datasheet Cover
2N7000RLRPG Datasheet Page 2 2N7000RLRPG Datasheet Page 3 2N7000RLRPG Datasheet Page 4

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • 2N7000RLRPG Datasheet
  • where to find 2N7000RLRPG
  • ON Semiconductor

  • ON Semiconductor 2N7000RLRPG
  • 2N7000RLRPG PDF Datasheet
  • 2N7000RLRPG Stock

  • 2N7000RLRPG Pinout
  • Datasheet 2N7000RLRPG
  • 2N7000RLRPG Supplier

  • ON Semiconductor Distributor
  • 2N7000RLRPG Price
  • 2N7000RLRPG Distributor

2N7000RLRPG Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds60pF @ 25V
FET Feature-
Power Dissipation (Max)350mW (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

The Products You May Be Interested In

IRLR8103TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

89A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

50nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

89W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRFR18N15DPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

125mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

43nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

900pF @ 25V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

STD13N65M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ M2

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

430mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

590pF @ 100V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

AUIRF4104S

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5.5mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3000pF @ 25V

FET Feature

-

Power Dissipation (Max)

140W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SI4158DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

36.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

132nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

5710pF @ 10V

FET Feature

-

Power Dissipation (Max)

3W (Ta), 6W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

Recently Sold

74HCT04D

74HCT04D

Toshiba Semiconductor and Storage

IC INVERTER 6CH 6-INP 14SOIC

SI7421DN-T1-E3

SI7421DN-T1-E3

Vishay Siliconix

MOSFET P-CH 30V 6.4A 1212-8

ADG406BPZ-REEL

ADG406BPZ-REEL

Analog Devices

IC MULTIPLEXER 16X1 28PLCC

MMSZ4683T1G

MMSZ4683T1G

ON Semiconductor

DIODE ZENER 3V 500MW SOD123

LK115D33-TR

LK115D33-TR

STMicroelectronics

IC REG LINEAR 3.3V 100MA 8SO

FGH75T65UPD

FGH75T65UPD

ON Semiconductor

IGBT 650V 150A 375W TO-247AB

JAN2N3501

JAN2N3501

Microsemi

TRANS NPN 150V 0.3A

38212000410

38212000410

Littelfuse

FUSE BOARD MOUNT 2A 250VAC RAD

1812L110/33MR

1812L110/33MR

Littelfuse

PTC RESET FUSE 33V 1.1A 1812

B0520LW-7-F

B0520LW-7-F

Diodes Incorporated

DIODE SCHOTTKY 20V 500MA SOD123

TMMDB3

TMMDB3

STMicroelectronics

DIAC 28-36V 2A MINIMELF

PDB-C134

PDB-C134

Advanced Photonix

SENSOR PHOTODIODE 950NM RADIAL