Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

2N7002AQ-7

2N7002AQ-7

For Reference Only

Part Number 2N7002AQ-7
PNEDA Part # 2N7002AQ-7
Description MOSFET NCH 60V 180MA SOT23
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 7,236
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2N7002AQ-7 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part Number2N7002AQ-7
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
2N7002AQ-7, 2N7002AQ-7 Datasheet (Total Pages: 5, Size: 235.22 KB)
PDF2N7002AQ-13 Datasheet Cover
2N7002AQ-13 Datasheet Page 2 2N7002AQ-13 Datasheet Page 3 2N7002AQ-13 Datasheet Page 4 2N7002AQ-13 Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • 2N7002AQ-7 Datasheet
  • where to find 2N7002AQ-7
  • Diodes Incorporated

  • Diodes Incorporated 2N7002AQ-7
  • 2N7002AQ-7 PDF Datasheet
  • 2N7002AQ-7 Stock

  • 2N7002AQ-7 Pinout
  • Datasheet 2N7002AQ-7
  • 2N7002AQ-7 Supplier

  • Diodes Incorporated Distributor
  • 2N7002AQ-7 Price
  • 2N7002AQ-7 Distributor

2N7002AQ-7 Specifications

ManufacturerDiodes Incorporated
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs5Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds23pF @ 25V
FET Feature-
Power Dissipation (Max)370mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23
Package / CaseTO-236-3, SC-59, SOT-23-3

The Products You May Be Interested In

IPB06N03LA G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2V @ 40µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2653pF @ 15V

FET Feature

-

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPT60R028G7XTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ G7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

28mOhm @ 28.8A, 10V

Vgs(th) (Max) @ Id

4V @ 1.44mA

Gate Charge (Qg) (Max) @ Vgs

123nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4820pF @ 400V

FET Feature

-

Power Dissipation (Max)

391W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-HSOF-8-2

Package / Case

8-PowerSFN

AOT8N65

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.15Ohm @ 4A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

28nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 25V

FET Feature

-

Power Dissipation (Max)

208W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

IRFR3103

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

400V

Current - Continuous Drain (Id) @ 25°C

1.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.6Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

170pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 25W (Tc)

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FQPF17N08

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

11.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

115mOhm @ 5.6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

450pF @ 25V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

Recently Sold

AD7994BRU-0REEL

AD7994BRU-0REEL

Analog Devices

IC ADC 12BIT SAR 16TSSOP

LM2903D

LM2903D

STMicroelectronics

IC COMPARATOR DUAL LP 8-SOIC

TPSD227K006R0100

TPSD227K006R0100

CAP TANT 220UF 10% 6.3V 2917

STPS0560Z

STPS0560Z

STMicroelectronics

DIODE SCHOTTKY 60V 500MA SOD123

HCPL-5631

HCPL-5631

Broadcom

OPTOISO 1.5KV 2CH OPEN COLL 8DIP

M24256-BRMN6TP

M24256-BRMN6TP

STMicroelectronics

IC EEPROM 256K I2C 1MHZ 8SO

NPI-19A-201AH

NPI-19A-201AH

Amphenol Advanced Sensors

SENSOR PRES 29PSI ABS

RL2010FK-070R43L

RL2010FK-070R43L

Yageo

RES 0.43 OHM 1% 3/4W 2010

J201

J201

ON Semiconductor

JFET N-CH 40V 0.625W TO92

WSL1206R0500FEA

WSL1206R0500FEA

Vishay Dale

RES 0.05 OHM 1% 1/4W 1206

SIT9102AI-243N25E200.00000X

SIT9102AI-243N25E200.00000X

SiTIME

MEMS OSC XO 200.0000MHZ LVDS SMD

ADP1755ACPZ-R7

ADP1755ACPZ-R7

Analog Devices

IC REG LIN POS ADJ 1.2A 16LFCSP