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2N7635-GA

2N7635-GA

For Reference Only

Part Number 2N7635-GA
PNEDA Part # 2N7635-GA
Description TRANS SJT 650V 4A TO-257
Manufacturer GeneSiC Semiconductor
Unit Price Request a Quote
In Stock 4,518
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2N7635-GA Resources

Brand GeneSiC Semiconductor
ECAD Module ECAD
Mfr. Part Number2N7635-GA
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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2N7635-GA Specifications

ManufacturerGeneSiC Semiconductor
Series-
FET Type-
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C4A (Tc) (165°C)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs415mOhm @ 4A
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds324pF @ 35V
FET Feature-
Power Dissipation (Max)47W (Tc)
Operating Temperature-55°C ~ 225°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-257
Package / CaseTO-257-3

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