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2PS06017E32G28213NOSA1

2PS06017E32G28213NOSA1

For Reference Only

Part Number 2PS06017E32G28213NOSA1
PNEDA Part # 2PS06017E32G28213NOSA1
Description IGBT MODULE 1100VDC 325A
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,434
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2PS06017E32G28213NOSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part Number2PS06017E32G28213NOSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Modules
Datasheet
2PS06017E32G28213NOSA1, 2PS06017E32G28213NOSA1 Datasheet (Total Pages: 7, Size: 490.86 KB)
PDF2PS06017E32G28213NOSA1 Datasheet Cover
2PS06017E32G28213NOSA1 Datasheet Page 2 2PS06017E32G28213NOSA1 Datasheet Page 3 2PS06017E32G28213NOSA1 Datasheet Page 4 2PS06017E32G28213NOSA1 Datasheet Page 5 2PS06017E32G28213NOSA1 Datasheet Page 6 2PS06017E32G28213NOSA1 Datasheet Page 7

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2PS06017E32G28213NOSA1 Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Configuration2 Independent
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Power - Max-
Vce(on) (Max) @ Vge, Ic-
Current - Collector Cutoff (Max)-
Input Capacitance (Cies) @ Vce-
InputStandard
NTC ThermistorYes
Operating Temperature-25°C ~ 55°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector (Ic) (Max)

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Power - Max

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Vce(on) (Max) @ Vge, Ic

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Current - Collector Cutoff (Max)

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Input Capacitance (Cies) @ Vce

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Power - Max

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Vce(on) (Max) @ Vge, Ic

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Current - Collector Cutoff (Max)

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Input Capacitance (Cies) @ Vce

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Operating Temperature

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