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2PS12017E34W32132NOSA1

2PS12017E34W32132NOSA1

For Reference Only

Part Number 2PS12017E34W32132NOSA1
PNEDA Part # 2PS12017E34W32132NOSA1
Description MODULE IGBT STACK A-PS4-1
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,866
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2PS12017E34W32132NOSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part Number2PS12017E34W32132NOSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Modules

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2PS12017E34W32132NOSA1 Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
ConfigurationThree Phase Inverter
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Power - Max-
Vce(on) (Max) @ Vge, Ic-
Current - Collector Cutoff (Max)-
Input Capacitance (Cies) @ Vce-
InputStandard
NTC ThermistorNo
Operating Temperature-25°C ~ 55°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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Vce(on) (Max) @ Vge, Ic

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Current - Collector Cutoff (Max)

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Input Capacitance (Cies) @ Vce

4.62nF @ 25V

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200µA

Input Capacitance (Cies) @ Vce

6.5nF @ 25V

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No

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Manufacturer

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Series

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IGBT Type

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Three Phase Inverter

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

50A

Power - Max

280W

Vce(on) (Max) @ Vge, Ic

2.25V @ 15V, 50A

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Series

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IGBT Type

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Configuration

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Current - Collector (Ic) (Max)

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Power - Max

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Vce(on) (Max) @ Vge, Ic

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Current - Collector Cutoff (Max)

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Input Capacitance (Cies) @ Vce

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Power - Max

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Vce(on) (Max) @ Vge, Ic

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Current - Collector Cutoff (Max)

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Input Capacitance (Cies) @ Vce

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Input

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NTC Thermistor

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Operating Temperature

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Mounting Type

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Package / Case

-

Supplier Device Package

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