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2SA1013-O,T6MIBF(J

2SA1013-O,T6MIBF(J

For Reference Only

Part Number 2SA1013-O,T6MIBF(J
PNEDA Part # 2SA1013-O-T6MIBF-J
Description TRANS PNP 1A 160V TO226-3
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 4,680
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SA1013-O Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part Number2SA1013-O,T6MIBF(J
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single
Datasheet
2SA1013-O, 2SA1013-O Datasheet (Total Pages: 5, Size: 178.57 KB)
PDF2SA1013-O Datasheet Cover
2SA1013-O Datasheet Page 2 2SA1013-O Datasheet Page 3 2SA1013-O Datasheet Page 4 2SA1013-O Datasheet Page 5

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2SA1013-O Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypePNP
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)160V
Vce Saturation (Max) @ Ib, Ic1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 200mA, 5V
Power - Max900mW
Frequency - Transition50MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 Long Body
Supplier Device PackageTO-92L

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