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2SC2229(TE6SAN1F,M

2SC2229(TE6SAN1F,M

For Reference Only

Part Number 2SC2229(TE6SAN1F,M
PNEDA Part # 2SC2229-TE6SAN1F-M
Description TRANS NPN 50MA 150V TO226-3
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 5,058
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 23 - May 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SC2229(TE6SAN1F Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part Number2SC2229(TE6SAN1F,M
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single
Datasheet
2SC2229(TE6SAN1F, 2SC2229(TE6SAN1F Datasheet (Total Pages: 5, Size: 138.76 KB)
PDF2SC2229-Y Datasheet Cover
2SC2229-Y Datasheet Page 2 2SC2229-Y Datasheet Page 3 2SC2229-Y Datasheet Page 4 2SC2229-Y Datasheet Page 5

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2SC2229(TE6SAN1F Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypeNPN
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)150V
Vce Saturation (Max) @ Ib, Ic500mV @ 1mA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 10mA, 5V
Power - Max800mW
Frequency - Transition120MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 Long Body
Supplier Device PackageTO-92MOD

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