2SC2714-Y(TE85L,F)
For Reference Only
| Part Number | 2SC2714-Y(TE85L,F) |
| PNEDA Part # | 2SC2714-Y-TE85L-F |
| Description | RF TRANS NPN 30V 550MHZ SMINI |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 21,630 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 16 - Jun 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
2SC2714-Y(TE85L Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
|
| Mfr. Part Number | 2SC2714-Y(TE85L,F) |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- 2SC2714-Y(TE85L,F) Datasheet
- where to find 2SC2714-Y(TE85L,F)
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage 2SC2714-Y(TE85L,F)
- 2SC2714-Y(TE85L,F) PDF Datasheet
- 2SC2714-Y(TE85L,F) Stock
- 2SC2714-Y(TE85L,F) Pinout
- Datasheet 2SC2714-Y(TE85L,F)
- 2SC2714-Y(TE85L,F) Supplier
- Toshiba Semiconductor and Storage Distributor
- 2SC2714-Y(TE85L,F) Price
- 2SC2714-Y(TE85L,F) Distributor
2SC2714-Y(TE85L Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Frequency - Transition | 550MHz |
| Noise Figure (dB Typ @ f) | 2.5dB @ 100MHz |
| Gain | 23dB |
| Power - Max | 100mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 6V |
| Current - Collector (Ic) (Max) | 20mA |
| Operating Temperature | 125°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | S-Mini |
The Products You May Be Interested In
|
Manufacturer CEL Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 10V Frequency - Transition 10GHz Noise Figure (dB Typ @ f) 1.9dB @ 2GHz Gain 9.4dB Power - Max 150mW DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 5mA, 3V Current - Collector (Ic) (Max) 35mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package SOT-323 |
Manufacturer Ampleon USA Inc. Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 55V Frequency - Transition 235MHz Noise Figure (dB Typ @ f) - Gain - Power - Max 340W DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 7A, 5V Current - Collector (Ic) (Max) 12A Operating Temperature 200°C (TJ) Mounting Type Surface Mount Package / Case SOT-121B Supplier Device Package CRFM4 |
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 65V Frequency - Transition 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f) - Gain 10dB ~ 10.5dB Power - Max 125W DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 100mA, 5V Current - Collector (Ic) (Max) 2.5A Operating Temperature 200°C (TJ) Mounting Type Chassis Mount Package / Case 55FW-1 Supplier Device Package 55FW-1 |
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 60V Frequency - Transition 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f) - Gain 8dB ~ 9dB Power - Max 225W DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 300mA, 5V Current - Collector (Ic) (Max) 4.5A Operating Temperature 200°C (TJ) Mounting Type Chassis Mount Package / Case 55CT Supplier Device Package 55CT |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 25V Frequency - Transition 650MHz Noise Figure (dB Typ @ f) - Gain - Power - Max 350mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA, 10V Current - Collector (Ic) (Max) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
