2SC5085-O(TE85L,F)
For Reference Only
| Part Number | 2SC5085-O(TE85L,F) |
| PNEDA Part # | 2SC5085-O-TE85L-F |
| Description | RF TRANS NPN 12V 7GHZ USM |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 4,320 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 8 - May 13 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
2SC5085-O(TE85L Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
|
| Mfr. Part Number | 2SC5085-O(TE85L,F) |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- 2SC5085-O(TE85L,F) Datasheet
- where to find 2SC5085-O(TE85L,F)
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage 2SC5085-O(TE85L,F)
- 2SC5085-O(TE85L,F) PDF Datasheet
- 2SC5085-O(TE85L,F) Stock
- 2SC5085-O(TE85L,F) Pinout
- Datasheet 2SC5085-O(TE85L,F)
- 2SC5085-O(TE85L,F) Supplier
- Toshiba Semiconductor and Storage Distributor
- 2SC5085-O(TE85L,F) Price
- 2SC5085-O(TE85L,F) Distributor
2SC5085-O(TE85L Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1dB @ 500MHz |
| Gain | - |
| Power - Max | 100mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 20mA, 10V |
| Current - Collector (Ic) (Max) | 80mA |
| Operating Temperature | 125°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Supplier Device Package | USM |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 10V Frequency - Transition 7GHz Noise Figure (dB Typ @ f) 1dB @ 1GHz Gain 12dB Power - Max 200mW DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 20mA, 5V Current - Collector (Ic) (Max) 70mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package 3-CP |
Manufacturer STMicroelectronics Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 16V Frequency - Transition - Noise Figure (dB Typ @ f) - Gain 10dB Power - Max 70W DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 250mA, 5V Current - Collector (Ic) (Max) 8A Operating Temperature 200°C (TJ) Mounting Type Surface Mount Package / Case M135 Supplier Device Package M135 |
Manufacturer Infineon Technologies Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 8GHz Noise Figure (dB Typ @ f) 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz Gain 22dB Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 8V Current - Collector (Ic) (Max) 35mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-82A, SOT-343 Supplier Device Package PG-SOT343-4 |
Manufacturer Microsemi Corporation Series - Transistor Type - Voltage - Collector Emitter Breakdown (Max) - Frequency - Transition - Noise Figure (dB Typ @ f) - Gain - Power - Max - DC Current Gain (hFE) (Min) @ Ic, Vce - Current - Collector (Ic) (Max) - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer CEL Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 10V Frequency - Transition 9GHz Noise Figure (dB Typ @ f) 1.2dB @ 1GHz Gain 17dB ~ 23dB Power - Max 200mW DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA, 8V Current - Collector (Ic) (Max) 65mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-253-4, TO-253AA Supplier Device Package - |
