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2SD2406-Y(F)

2SD2406-Y(F)

For Reference Only

Part Number 2SD2406-Y(F)
PNEDA Part # 2SD2406-Y-F
Description TRANS NPN 80V 4A TO220NIS
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 5,868
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SD2406-Y(F) Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part Number2SD2406-Y(F)
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single
Datasheet
2SD2406-Y(F), 2SD2406-Y(F) Datasheet (Total Pages: 4, Size: 142.94 KB)
PDF2SD2406-Y(F) Datasheet Cover
2SD2406-Y(F) Datasheet Page 2 2SD2406-Y(F) Datasheet Page 3 2SD2406-Y(F) Datasheet Page 4

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2SD2406-Y(F) Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypeNPN
Current - Collector (Ic) (Max)4A
Voltage - Collector Emitter Breakdown (Max)80V
Vce Saturation (Max) @ Ib, Ic1.5V @ 300mA, 3A
Current - Collector Cutoff (Max)30µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 500mA, 5V
Power - Max25W
Frequency - Transition8MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220NIS

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