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2SJ162-E

2SJ162-E

For Reference Only

Part Number 2SJ162-E
PNEDA Part # 2SJ162-E
Description MOSFET P-CH 160V 7A TO-3P
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 5,076
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SJ162-E Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part Number2SJ162-E
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
2SJ162-E, 2SJ162-E Datasheet (Total Pages: 8, Size: 83.95 KB)
PDF2SJ162-E Datasheet Cover
2SJ162-E Datasheet Page 2 2SJ162-E Datasheet Page 3 2SJ162-E Datasheet Page 4 2SJ162-E Datasheet Page 5 2SJ162-E Datasheet Page 6 2SJ162-E Datasheet Page 7 2SJ162-E Datasheet Page 8

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2SJ162-E Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)160V
Current - Continuous Drain (Id) @ 25°C7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds900pF @ 10V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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