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2SJ360(F)

2SJ360(F)

For Reference Only

Part Number 2SJ360(F)
PNEDA Part # 2SJ360-F
Description MOSFET P-CH 60V 1A SC-62
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 4,824
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SJ360(F) Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part Number2SJ360(F)
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
2SJ360(F), 2SJ360(F) Datasheet (Total Pages: 6, Size: 209.31 KB)
PDF2SJ360(TE12L Datasheet Cover
2SJ360(TE12L Datasheet Page 2 2SJ360(TE12L Datasheet Page 3 2SJ360(TE12L Datasheet Page 4 2SJ360(TE12L Datasheet Page 5 2SJ360(TE12L Datasheet Page 6

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2SJ360(F) Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs730mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs6.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds155pF @ 10V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePW-MINI
Package / CaseTO-243AA

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