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2SJ377(TE16R1,NQ)

2SJ377(TE16R1,NQ)

For Reference Only

Part Number 2SJ377(TE16R1,NQ)
PNEDA Part # 2SJ377-TE16R1-NQ
Description MOSFET P-CH 60V 5A PW-MOLD
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 6,228
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SJ377(TE16R1 Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part Number2SJ377(TE16R1,NQ)
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
2SJ377(TE16R1, 2SJ377(TE16R1 Datasheet (Total Pages: 6, Size: 404.73 KB)
PDF2SJ377(TE16R1 Datasheet Cover
2SJ377(TE16R1 Datasheet Page 2 2SJ377(TE16R1 Datasheet Page 3 2SJ377(TE16R1 Datasheet Page 4 2SJ377(TE16R1 Datasheet Page 5 2SJ377(TE16R1 Datasheet Page 6

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2SJ377(TE16R1 Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs190mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds630pF @ 10V
FET Feature-
Power Dissipation (Max)20W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePW-MOLD
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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