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2SJ380(F)

2SJ380(F)

For Reference Only

Part Number 2SJ380(F)
PNEDA Part # 2SJ380-F
Description MOSFET P-CH 100V 12A TO220NIS
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 6,606
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SJ380(F) Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part Number2SJ380(F)
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
2SJ380(F), 2SJ380(F) Datasheet (Total Pages: 6, Size: 230.12 KB)
PDF2SJ380(F) Datasheet Cover
2SJ380(F) Datasheet Page 2 2SJ380(F) Datasheet Page 3 2SJ380(F) Datasheet Page 4 2SJ380(F) Datasheet Page 5 2SJ380(F) Datasheet Page 6

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2SJ380(F) Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs210mOhm @ 6A, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs48nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 10V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220NIS
Package / CaseTO-220-3 Full Pack

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