Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

2SK1339-E

2SK1339-E

For Reference Only

Part Number 2SK1339-E
PNEDA Part # 2SK1339-E
Description MOSFET N-CH 900V 3A TO-3P
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 6,822
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SK1339-E Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part Number2SK1339-E
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
2SK1339-E, 2SK1339-E Datasheet (Total Pages: 9, Size: 96.17 KB)
PDF2SK1339-E Datasheet Cover
2SK1339-E Datasheet Page 2 2SK1339-E Datasheet Page 3 2SK1339-E Datasheet Page 4 2SK1339-E Datasheet Page 5 2SK1339-E Datasheet Page 6 2SK1339-E Datasheet Page 7 2SK1339-E Datasheet Page 8 2SK1339-E Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • 2SK1339-E Datasheet
  • where to find 2SK1339-E
  • Renesas Electronics America

  • Renesas Electronics America 2SK1339-E
  • 2SK1339-E PDF Datasheet
  • 2SK1339-E Stock

  • 2SK1339-E Pinout
  • Datasheet 2SK1339-E
  • 2SK1339-E Supplier

  • Renesas Electronics America Distributor
  • 2SK1339-E Price
  • 2SK1339-E Distributor

2SK1339-E Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds425pF @ 10V
FET Feature-
Power Dissipation (Max)80W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

The Products You May Be Interested In

NX3008PBKW,115

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101, TrenchMOS™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

4.1Ohm @ 200mA, 4.5V

Vgs(th) (Max) @ Id

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.72nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

46pF @ 15V

FET Feature

-

Power Dissipation (Max)

260mW (Ta), 830mW (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70

Package / Case

SC-70, SOT-323

QS5U16TR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

100mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

3.9nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

175pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

900mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TSMT5

Package / Case

SOT-23-5 Thin, TSOT-23-5

NVTFWS002N04CLTAG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

STP5N80K5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.75Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

5nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

177pF @ 100V

FET Feature

-

Power Dissipation (Max)

60W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

AOT11N70

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

700V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

870mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2150pF @ 25V

FET Feature

-

Power Dissipation (Max)

271W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

Recently Sold

XC3S200AN-4FTG256C

XC3S200AN-4FTG256C

Xilinx

IC FPGA 195 I/O 256FTBGA

ADM3260ARSZ

ADM3260ARSZ

Analog Devices

DGTL ISO 2.5KV 2CH I2C 20SSOP

ISL6124IRZA-T

ISL6124IRZA-T

Renesas Electronics America Inc.

IC POWER SUPPLY SEQUENCER 24QFN

ADSP-BF527BBCZ-5A

ADSP-BF527BBCZ-5A

Analog Devices

IC DSP 16BIT 533MHZ 208CSBGA

ZXM61P02FTA

ZXM61P02FTA

Diodes Incorporated

MOSFET P-CH 20V 0.9A SOT23-3

EN5339QI

EN5339QI

Intel

DC DC CONVERTER 0.6-4.6V 14W

GP10J-E3/54

GP10J-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

S25FL064P0XMFI001

S25FL064P0XMFI001

Cypress Semiconductor

IC FLASH 64M SPI 104MHZ 16SOIC

MBRD1035CTLG

MBRD1035CTLG

ON Semiconductor

DIODE ARRAY SCHOTTKY 35V 5A DPAK

MAX3208EAUB+T

MAX3208EAUB+T

Maxim Integrated

TVS DIODE 10UMAX

PA95

PA95

Apex Microtechnology

IC OPAMP POWER 1 CIRCUIT 8SIP

S2B-13-F

S2B-13-F

Diodes Incorporated

DIODE GEN PURP 100V 1.5A SMB